Investigation of Hole Mobility in GaInP/(In) GaAs/GaAs p-Type Modulation Doped Heterostructures

Chin. Phys. Lett.

1999, Vol. 16

Issue (1): 50-52 DOI:

Original Articles

Investigation of Hole Mobility in GaInP/(In) GaAs/GaAs p-Type Modulation Doped Heterostructures

YANG Quan-kui;LI Ai-zhen;CHEN Jian-xin

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050

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YANG Quan-kui, LI Ai-zhen, CHEN Jian-xin 1999 Chin. Phys. Lett. 16 50-52

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Abstract Ga_0.51In_0.49P/(In)GaAs/GaAs heterostructure is regarded as an excellent candidate for two dimensional hole gas system as it has a large valence band offset ratio. In this paper, we report the hole mobility in GaInP/GaAs and GaInP/ In_0.20G_0.80As/GaAs p-type modulation doped heterostructures grown by gas source molecular beam epitaxy with different p-channels and doping methods. The influences of Be:GaAs cap layer, δ-doping, and strained InGaAs p-channel on hole mobility are discussed, and qualitatively explained by the ionized impurity scattering mechanism. Finally, it was shown that the improvement of hole mobility could be achieved by the δ-doping method combined with strained InGaAs channel.

Keywords: 72.20.Er 72.80.Ey

Published: 01 January 1999

PACS:	72.20.Er
	72.80.Ey	(III-V and II-VI semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I1/050

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	YANG Quan-kui
	LI Ai-zhen
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