| Original Articles |
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SiGe Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition |
| HUANG Jing-yun;YE Zhi-zhen;LU Huan-ming;JIANG Xiao-bo;WU Hui-zhen1;ZHAO Bing-hui;WANG Lei;QUE Duan-lin |
| State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
1Department of Physics, Hangzhou University, Hangzhou 310028
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| Cite this article: |
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HUANG Jing-yun, YE Zhi-zhen, LU Huan-ming et al 1998 Chin. Phys. Lett. 15 692-694 |
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Abstract A SiGe/Si epilayer with a linear-step-graded buffer was grown by ultrahigh vacuum chemical vapor deposition technique at a relatively high growth temperature (780°C) and a relatively high growth rate. Almost linear Ge content variation was realized in the buffer layer due to the Ge segregation to the growing surface during epitaxial growth. Double crystal x-ray diffraction and Raman spectroscopy show that the upper layer is fully relaxed. However, the measured results show that the density of dislocation in the composition graded structure is much lower than that in single-step epilayer structures.
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| Keywords:
81.15.Gh
73.40.Lq
68.55.Jk
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Published: 01 September 1998
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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68.55.Jk
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