Ge Related-Defect Energy and Microcavity Effect in GaN Epitaxial Layer

Chin. Phys. Lett.

1998, Vol. 15

Issue (9): 674-676 DOI:

Original Articles

Ge Related-Defect Energy and Microcavity Effect in GaN Epitaxial Layer

ZHAO Yi-guang^1,2;CHENG Lei^1,2; HUANG Xian-ling^1,2;ZHANG Guo-yi³;LI Jing³;YANG Zhi-jian³

¹Department of Physics, Peking University, Beijing 100871 ²National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 ³Department of Physics, Mesoscopic Physics Laboratory, Peking University, Beijing 100871

Cite this article:

ZHAO Yi-guang, CHENG Lei, HUANG Xian-ling et al 1998 Chin. Phys. Lett. 15 674-676

Download: PDF(204KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Using solid-phase regrowth technique, Pd/Ge contact has been made on the GaN layer, and very good ohmic behavior was observed for the contact. The Photoluminescence (PL) spectra for different structures formed by the Pd/Ge contact, GaN layer, sapphire substrate, and mirror were studied, and a defect-assisted transition was found at 450nm related to Ge impurity. The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.

Keywords: 71.55.Eq 78.55.Cr 78.66.Fd

Published: 01 September 1998

PACS:	71.55.Eq	(III-V semiconductors)
	78.55.Cr	(III-V semiconductors)
	78.66.Fd	(III-V semiconductors)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I9/0674

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	ZHAO Yi-guang
	CHENG Lei
	HUANG Xian-ling
	ZHANG Guo-yi
	LI Jing
	YANG Zhi-jian

Related articles from Frontiers Journals

[1]	TENG Long, ZHANG Rong, XIE Zi-Li, TAO Tao, ZHANG Zhao, LI Ye-Cao, LIU Bin, CHEN Peng, HAN Ping, ZHENG You-Dou. Raman Scattering Study of In_xGa_1−xN Alloys with Low Indium Compositions[J]. Chin. Phys. Lett., 2012, 29(2): 674-676
[2]	XU Sheng-Rui, LIN Zhi-Yu, XUE Xiao-Yong, LIU Zi-Yang, MA Jun-Cai, JIANG Teng, MAO Wei, WANG Dang-Hui, ZHANG Jin-Cheng, HAO Yue. Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a−Plane and Semipolar (11[J]. Chin. Phys. Lett., 2012, 29(1): 674-676**
[3]	SONG Shi-Wei, LIANG Hong-Wei, LIU Yang, XIA Xiao-Chuan, SHEN Ren-Sheng, LUO Ying-Min, DU Guo-Tong,. A Study of GaN Grown on SiH₄ Pre-Treated 6H-SiC Substrates**[J]. Chin. Phys. Lett., 2012, 29(1): 674-676
[4]	JI Chang-Jian, ZHANG Cheng-Qiang, ZHAO Gang, WANG Wen-Jing, SUN Gang, YUAN Hui-Min, HAN Qi-Feng . Preparation and Properties of Diluted Magnetic Semiconductors GaMnAs by Low-Temperature Molecular Epitaxy**[J]. Chin. Phys. Lett., 2011, 28(9): 674-676
[5]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 674-676
[6]	XIE Zi-Li, ZHANG Rong, LIU Bin, XIU Xiang-Qian, SU Hui, LI Yi, HUA Xue-Mei, ZHAO Hong, CHEN Peng, HAN Ping, SHI Yi, ZHENG You-Dou . Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells**[J]. Chin. Phys. Lett., 2011, 28(8): 674-676
[7]	U. Yesilgul, F. Ungan, E. Kasapoglu, H. Sari, I. Sö, kmen . Effects of an Intense Laser Field and Hydrostatic Pressure on the Intersubband Transitions and Binding Energy of Shallow Donor Impurities in a Quantum Well**[J]. Chin. Phys. Lett., 2011, 28(7): 674-676
[8]	WANG Fei, , ZHANG Xin-Liang, YU Yu, XU En-Ming . Preprocessing-Free All-Optical Clock Recovery from NRZ and NRZ-DPSK Signals Using an FP-SOA Based Active Filter**[J]. Chin. Phys. Lett., 2011, 28(6): 674-676
[9]	SUI Yan-Ping, YU Guang-Hui . Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy**[J]. Chin. Phys. Lett., 2011, 28(6): 674-676
[10]	WANG Yong, , YU Nai-Sen, LI Ming, LAU Kei-May . Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD**[J]. Chin. Phys. Lett., 2011, 28(5): 674-676
[11]	WANG Lai, ZHAO Wei, HAO Zhi-Biao, LUO Yi . Photocatalysis of InGaN Nanodots Responsive to Visible Light**[J]. Chin. Phys. Lett., 2011, 28(5): 674-676
[12]	GAO Bo, LIU Hong-Xia, WANG Shu-Long . AlGaN/GaN Ultraviolet Detector with Dual Band Response**[J]. Chin. Phys. Lett., 2011, 28(5): 674-676
[13]	LIU Zhan-Hui, XIU Xiang-Qian, YAN Huai-Yue, ZHANG Rong, XIE Zi-Li, HAN Ping, SHI Yi, ZHENG You-Dou . Gallium Nitride Nanowires Grown by Hydride Vapor Phase Epitaxy**[J]. Chin. Phys. Lett., 2011, 28(5): 674-676
[14]	SHI Feng, , ZHANG Yi-Jun, CHENG Hong-Chang, ZHAO Jing, XIONG Ya-Juan, CHANG Ben-Kang . Theoretical Revision and Experimental Comparison of Quantum Yield for Transmission-Mode GaAlAs/GaAs Photocathodes**[J]. Chin. Phys. Lett., 2011, 28(4): 674-676
[15]	HOU Qi-Feng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, YIN Hai-Bo, LI Jin-Min, WANG Zhan-Guo . Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN**[J]. Chin. Phys. Lett., 2011, 28(3): 674-676

Viewed

Full text

Abstract