| Original Articles |
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High Average Emission Sites Density of Electron Field Emission from Broad Area Diamond-Amorphous Carbon Thin Films |
| WANG Xiao-ping1,2;YAO Ning1;LI Yun-jun1;ZHANG Bing-lin1 |
| 1Department of Physics, Institute of Henan Fundamental and Applied Science Reserach, Zhengzhou University, Zhengzhou 450052
2Department of Applied Science, Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450052
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| Cite this article: |
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WANG Xiao-ping, YAO Ning, LI Yun-jun et al 1998 Chin. Phys. Lett. 15 611-612 |
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Abstract Diamond-amorphous carbon films were deposited on metal Mo substrates by using microwave chemical vapor deposition technique and masked technique (the Mo substrates were pretreated by special techniques). Round area of diamond-amorphous carbon films is 0.78±0.001cm2. The films were characterized by x-ray diffraction, Raman spectrum, optical microscopy, and scanning electron microscopy. The result of experiment indicates that diamond-amorphous carbon films with graphite particulates surface morphologies and diamond submicro-sized crystalline grains located in it were obtained. Based on this, a novel electron field emission device was made. The lowest turn-on field of 1V/μm, high average emission current density of 8.0± 0.1mA/cm2, and high average emission sites density of (2.00±0.03) x 103 sites/cm2 from a broad well-proportioned emission area of 0.780±0.001 cm2 were obtained, and the smaller the graphite particulate, the better the emission character. Field enhancement due to a ‘projection on a projection’ geometry could be a partial explanation of the result.
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| Keywords:
79.70.+q
81.15.Gh
73.40.Gk
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Published: 01 August 1998
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| PACS: |
79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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73.40.Gk
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(Tunneling)
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