Chin. Phys. Lett.  1998, Vol. 15 Issue (8): 588-560    DOI:
Original Articles |
Binding Energy of Biexcitons in Two-Dimensional Semiconductors
LIU Jian-jun1,2;KONG Xiao-jun1,2;WEI Cheng-wen1,2;LI Shu-shen1
1National Laboratory for Superlattices and Microstructures, Beijing 100083 2Department of Physics, Hebei Normal University, Shijiazhuang 050016
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LIU Jian-jun, KONG Xiao-jun, WEI Cheng-wen et al  1998 Chin. Phys. Lett. 15 588-560
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Abstract The binding energies of a two-dimensional (2D) biexciton have been calculated variationally for all values of the effective electron-to-hole mass ratio u by using a three-parameter wave function. The ratio of the binding energy of a 2D biexciton to that of a 2D exciton is found to be from 0.582 to 0.220. The results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.
Keywords: 71.35.+z      73.20.Dx     
Published: 01 August 1998
PACS:  71.35.+z  
  73.20.Dx  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1998/V15/I8/0588
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WEI Cheng-wen
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