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Binding Energy of Biexcitons in Two-Dimensional Semiconductors |
LIU Jian-jun1,2;KONG Xiao-jun1,2;WEI Cheng-wen1,2;LI Shu-shen1 |
1National Laboratory for Superlattices and Microstructures, Beijing 100083
2Department of Physics, Hebei Normal University, Shijiazhuang 050016 |
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Cite this article: |
LIU Jian-jun, KONG Xiao-jun, WEI Cheng-wen et al 1998 Chin. Phys. Lett. 15 588-560 |
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Abstract The binding energies of a two-dimensional (2D) biexciton have been calculated variationally for all values of the effective electron-to-hole mass ratio u by using a three-parameter wave function. The ratio of the binding energy of a 2D biexciton to that of a 2D exciton is found to be from 0.582 to 0.220. The results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.
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Keywords:
71.35.+z
73.20.Dx
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Published: 01 August 1998
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