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Perimeter Effects on Heavy Doping GaAs Diodes |
| SHI Xiao-zhong;WANG Le;XIA Guan-qun |
| Department of Semiconductor Materials and Devices, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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SHI Xiao-zhong, WANG Le, XIA Guan-qun 1998 Chin. Phys. Lett. 15 370-372 |
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Abstract The influence of perimeter effects on dark I-V characteristics of GaAs diode is investigated experimentally. The results indicate that the diodes with high energy states density will be more easily shorted than that with low energy states density during alloying. The possibility of shunt short of GaAs diode increases with the decrease of the distance between the front contact and pn junction. The AlGaAs layers enhance the dark current.
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| Keywords:
73.40.Kp
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Published: 01 May 1998
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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