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Order-Disorder Transition in C60: Possible Role of Stacking Faults |
| GU Min1,2;Tong B. Tang2;WANG Ye-ning1;YAN Feng1;FENG Duan1 |
| 1National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093
2Department of Physics, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong
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| Cite this article: |
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GU Min, Tong B. Tang, WANG Ye-ning et al 1998 Chin. Phys. Lett. 15 357-359 |
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Abstract Differential scanning calorimetry revealed a secondary transition at a lower temperature besides the order-disorder phase transition near 260K in powders, not in single crystals, of C60 from which solvents and impurities had been carefully excluded. This is attributed to phase transformation facilitated by nucleation around stacking faults. This proposal is supported by internal friction measurements on films, which confirmed the presence of this secondary transition, and by x-ray diffraction, which detected an hcp structure within the fcc lattice of C60 at room temperature.
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| Keywords:
61.48.+c
61.72.Nn
64.60.Cn
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Published: 01 May 1998
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| PACS: |
61.48.+c
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61.72.Nn
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(Stacking faults and other planar or extended defects)
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64.60.Cn
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(Order-disorder transformations)
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