Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO<suB>2</suB> Film/p-Si Structures

Chin. Phys. Lett.

1998, Vol. 15

Issue (4): 305-307 DOI:

Original Articles

Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO₂ Film/p-Si Structures

LI An-ping;ZHANG Bo-rui;QIAO Yong-ping;QIN Guo-gang;MA Zhen-chang¹;ZONG Wan-hua¹

Department of Physics, Peking University, Beijing 100871 ¹The 13th Institute of the Ministry of Electronic Industry, Shijiazhuang 050051

Cite this article:

LI An-ping, ZHANG Bo-rui, QIAO Yong-ping et al 1998 Chin. Phys. Lett. 15 305-307

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Abstract We have studied the effects of γ-ray irradiation on electroluminescence (EL) from Au/extra thin Si-rich SiO₂ film/p-Si Structures. After γ-ray irradiation, for the structure with a 600°C annealed Si-rich SiO₂ film a new blue EL band with a peak at around 480nm was observed, and for the structure with a 300°C annealed Si-rich SiO₂ film the red EL band shifts from 670 to 660nm and its intensity and full width at half maximum increase pronouncedly. The experimental results demonstrate that the defects induced by γ-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.

Keywords: 78.60.Fi 78.66.Nk

Published: 01 April 1998

PACS:	78.60.Fi	(Electroluminescence)
	78.66.Nk	(Insulators)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I4/0305

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	LI An-ping
	ZHANG Bo-rui
	QIAO Yong-ping
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	MA Zhen-chang
	ZONG Wan-hua

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