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Orthogonal Alignment InAs Islands Formation on GaAs Tensile Strained Layer Grown on (001) InP Substrate by Low Pressure Metal-Organic Chemical Vapor Deposition |
| GAO Chun-xiao1;WANG Ben-zhong2;LIU Bing-bing1;LIU Shi-yong2;ZOU Guang-tian1 |
| 1State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
2State Key Laboratory on Integrated Optoelectronics, Jilin University Region, Changchun 130023
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| Cite this article: |
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GAO Chun-xiao, WANG Ben-zhong, LIU Bing-bing et al 1998 Chin. Phys. Lett. 15 843-845 |
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Abstract Nucleation control is one of the key questions in quantum dots preparation and application. This paper reports the experimental results of orthogonal alignment InAs islands formed on (001) InP substrate by low-pressure metal-organic chemical vapor deposition. As a nucleation control layer, the tensile strained GaAs epilayer with orthogonal trench structure was grown firstly on (001) InP substrate under Stranski-Krastanov growth mode. Then, the InAs islands were grown selectively on the trench edges by using strain effect. This growth technique results in the formation of orthogonal alignment InAs islands without any preprocessing technique prior to the growth.
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81.15.Gh
68.65.+g
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Published: 01 November 1998
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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68.65.+g
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