Highly Oriented Diamond Film Growth by Atomic Force Microscopy

Chin. Phys. Lett.

1998, Vol. 15

Issue (11): 822-824 DOI:

Original Articles

Highly Oriented Diamond Film Growth by Atomic Force Microscopy

LI Jian-long;MENG Ge;WU Ke-hui;WANG En-ge

State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080

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LI Jian-long, MENG Ge, WU Ke-hui et al 1998 Chin. Phys. Lett. 15 822-824

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Abstract Diamond thin films are grown with microwave plasma chemical vapor deposition method on silicon (100) substrates from methane/hydrogen gas mixture, and characterized with atomic force microscopy The results show that most of the diamond crystallites are highly oriented with the (100) planes parallel to the silicon substrate. Layer structures are found in the film, indicating a combination of layer-by-layer and island growth. Raman spectrum and x-ray diffraction also confirm the present results.

Keywords: 68.55.Jk 81.05.Tp 81.15.Gh

Published: 01 November 1998

PACS:	68.55.Jk
	81.05.Tp
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I11/0822

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	MENG Ge
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