Heteroepitaxial Growth of Single-Crystalline Diamond Film

Chin. Phys. Lett.

1998, Vol. 15

Issue (11): 819-821 DOI:

Original Articles

Heteroepitaxial Growth of Single-Crystalline Diamond Film

WANG Qi-min;CHEN Qing-gui;SHI Ri-hua;DONG Rong-kang;NI Ru-shan;ZHU Ji-qian

State Key Laboratory of Transducer Technology, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050

Cite this article:

WANG Qi-min, CHEN Qing-gui, SHI Ri-hua et al 1998 Chin. Phys. Lett. 15 819-821

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Abstract Using high temperature heteroepitaxial growth method the single-crystalline diamond film growth conditions have been studied by Raman spectrum and transmission electron diffraction. High temperature, low alcohol concentration, slow gas flow velocity, long epitaxial time and substrate located near the gas exit side on the susceptor are the favourable conditions for growing single-crystalline diamond film.

Keywords: 68.55.Jk 68.55.Ce 81.15.Gh

Published: 01 November 1998

PACS:	68.55.Jk
	68.55.Ce
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I11/0819

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	WANG Qi-min
	CHEN Qing-gui
	SHI Ri-hua
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	NI Ru-shan
	ZHU Ji-qian

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