Application of Electron Cyclotron Resonance Assisted Plasma in GaN Deposition

Chin. Phys. Lett.

1998, Vol. 15

Issue (10): 761-763 DOI:

Original Articles

Application of Electron Cyclotron Resonance Assisted Plasma in GaN Deposition

CHEN Guang-chao;DU Xiao-long¹;JIANG De-yi;YAO Xin-zi

Institute of Physics, Chinese Academy of Sciences, Beijing 100080 ¹Department of Applied Physics, Beijing Institute of Technology, Beijing 100081

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CHEN Guang-chao, DU Xiao-long, JIANG De-yi et al 1998 Chin. Phys. Lett. 15 761-763

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Abstract An electron cyclotron resonance assisted plasma with N₂ being the plasma source gas was employed to deposit hexagonal GaN on (0001) surface of α-Al₂O₃ substrate. By special gas distributor, trimethgallium was introduced into reactant zone. A 10 ×10mm uniform GaN film was gained with relatively low deposition temperature, 560°C, and high growth rate of 1.4μm/h. A good crystal microstructure was confirmed by its spectrum with full width at half maximum of 15 arcmin.

Keywords: 81.05.Ea 52.75.-d

Published: 01 October 1998

PACS:	81.05.Ea	(III-V semiconductors)
	52.75.-d	(Plasma devices)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I10/0761

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	CHEN Guang-chao
	DU Xiao-long
	JIANG De-yi
	YAO Xin-zi

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