P-Type GaN Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy

Chin. Phys. Lett.

1997, Vol. 14

Issue (8): 637-640 DOI:

Original Articles

P-Type GaN Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy

ZHANG Guo-yi;YANG Zhi-jian;TONG Yu-zhen;JIN Si-xuan;DANG Xiao-zhong;WANG Shu-min

Department of Physics, Mesoscopic Physics Laboratory, Peking University, Beijing 100871

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ZHANG Guo-yi, YANG Zhi-jian, TONG Yu-zhen et al 1997 Chin. Phys. Lett. 14 637-640

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Abstract P-type GaN was grown on AI₃O₂ substrate by low pressure metalorganic vapor phase epitaxy without any post treatment. The p-type conduction of as-grown GaN has the typical characteristics of a light-doped or high-compensation semiconductor, that is a hole concentration of 2.2 x 10¹⁷cm^-3 at 77K, which changes to n-type with an electron concentration of 2.7 x 10¹⁷ cm^-3 at room temperature. After thermal annealing under a N₂ ambient, it showed the characteristics of a heavy-doped semiconductor and the hole concentration was enhanced reaching a hole concentrations of 4.2 x 10¹⁷ at 77K and 5.7 x 10¹⁷ cm^-3 at room temperature.

Keywords: 81.15.Gh 68.55.Ce

Published: 01 August 1997

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.55.Ce

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I8/0637

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	ZHANG Guo-yi
	YANG Zhi-jian
	TONG Yu-zhen
	JIN Si-xuan
	DANG Xiao-zhong
	WANG Shu-min

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