Original Articles |
|
|
|
|
Fractal Formation in Sputtered Films of Bi2Sr2CaCU2O7-x on Si Substrates |
LIU Rong;QIAN Wen-sheng;WEI Tong-li |
Microelectronics Center, Southeast University, Nanjing 210018 |
|
Cite this article: |
LIU Rong, QIAN Wen-sheng, WEI Tong-li 1997 Chin. Phys. Lett. 14 621-624 |
|
|
Abstract Fractal regions appearing in BSCCO films after annealing have been investigated by atomic force microscopy and transmission electron microscope. The fractal dimensions and fractal density (number of fractals per unit area) are temperature dependent. At lower annealing temperature (450°C) both the morphologies and fractal dimensions closely resemble those arising in two dimensional diffusion-limited-aggregation (DLA) simulations. The observation results show that after annealing at 600°C or higher temperature, the fractal regions changed, even disappeared, which means the growth mechanism is very different from that of traditional DLA. A random diffusion and successive nucleation model has been proposed to explain the results.
|
Keywords:
74.75.+t
05.40.+j
|
|
Published: 01 August 1997
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|