Chin. Phys. Lett.  1997, Vol. 14 Issue (7): 553-556    DOI:
Original Articles |
Studies of the Gd Overlayer on Cr by Synchrotron Radiation Photoemission
ZHANG Fa-pei;XU Peng-shou;XU Shi-hong;LU Er-dong;YU Xiao-jiang;ZHANG Xin-yi
National Synchrotron Radiation Laboratory, University of Science and Techology of China, Hefei 230029
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ZHANG Fa-pei, XU Peng-shou, XU Shi-hong et al  1997 Chin. Phys. Lett. 14 553-556
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Abstract The formation of Gd/Cr interface, the growth mechanism and electronic structure of Gd over-layers were investigated by synchrotron radiation photoemission. It is shown that Gd adatoms interact with the Cr substrate weakly. A lower deposition rate of the Gd overlayer (l.0Å/min) favors the smooth growth of Gd/Cr interface. However, higher deposition rate (6.0Å/min) leads to the cluster growth of the Gd overlayer and the presence of a “two-peak” feature of Gd 4f emission. We correlate this feature with the different coordination number of surface atoms derived from cluster- induced surface roughness.
Keywords: 79.60.-i      68.55.-a      73.20.-r     
Published: 01 July 1997
PACS:  79.60.-i (Photoemission and photoelectron spectra)  
  68.55.-a (Thin film structure and morphology)  
  73.20.-r (Electron states at surfaces and interfaces)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1997/V14/I7/0553
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ZHANG Fa-pei
XU Peng-shou
XU Shi-hong
LU Er-dong
YU Xiao-jiang
ZHANG Xin-yi
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