| Original Articles |
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Studies of the Gd Overlayer on Cr by Synchrotron Radiation Photoemission |
| ZHANG Fa-pei;XU Peng-shou;XU Shi-hong;LU Er-dong;YU Xiao-jiang;ZHANG Xin-yi |
| National Synchrotron Radiation Laboratory, University of Science
and Techology of China, Hefei 230029
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| Cite this article: |
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ZHANG Fa-pei, XU Peng-shou, XU Shi-hong et al 1997 Chin. Phys. Lett. 14 553-556 |
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Abstract The formation of Gd/Cr interface, the growth mechanism and electronic structure of Gd over-layers were investigated by synchrotron radiation photoemission. It is shown that Gd adatoms interact with the Cr substrate weakly. A lower deposition rate of the Gd overlayer (l.0Å/min) favors the smooth growth of Gd/Cr interface. However, higher deposition rate (6.0Å/min) leads to the cluster growth of the Gd overlayer and the presence of a “two-peak” feature of Gd 4f emission. We correlate this feature with the different coordination number of surface atoms derived from cluster- induced surface roughness.
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| Keywords:
79.60.-i
68.55.-a
73.20.-r
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Published: 01 July 1997
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| PACS: |
79.60.-i
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(Photoemission and photoelectron spectra)
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68.55.-a
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(Thin film structure and morphology)
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73.20.-r
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(Electron states at surfaces and interfaces)
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