Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation

Chin. Phys. Lett.

1997, Vol. 14

Issue (7): 535-537 DOI:

Original Articles

Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation

ZHU Sheng-yun;LUO Qi;FAN Zhi-guo;WANG Chun-rui;ZHENG Sheng-nan;GOU Zhen-hui;LI An-li;QIAN Jia-yu¹

China Institute of Atomic Energy, Beijing 102413 ¹Beijing General Research Institute for Non-ferrous Metals, Beijing 100088

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ZHU Sheng-yun, LUO Qi, FAN Zhi-guo et al 1997 Chin. Phys. Lett. 14 535-537

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Abstract The defects induced by 64 MeV ¹⁹F ion irradiation to a Auence of 4.3 ×10¹⁶/cm² are investigated in GaAs by positron annihilation lifetime technique. Di-vacancies are created by the irradiation. The formation of tri- and quadri-vacancies is observed during thermal annealing. The di-, tri-and quadri-vacancies are annealed away at 350, 550 and 800°C, respectively.

Keywords: 61.80.-x 61.72.-y

Published: 01 July 1997

PACS:	61.80.-x	(Physical radiation effects, radiation damage)
	61.72.-y	(Defects and impurities in crystals; microstructure)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I7/0535

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	ZHU Sheng-yun
	LUO Qi
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	WANG Chun-rui
	ZHENG Sheng-nan
	GOU Zhen-hui
	LI An-li
	QIAN Jia-yu

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