Cluster Model for p-Type Doping of ZnSe

Chin. Phys. Lett.

1997, Vol. 14

Issue (7): 528-530 DOI:

Original Articles

Cluster Model for p-Type Doping of ZnSe

REN Tian-ling;ZHU Jia-lin;XIONG Jia-jiong;DUAN Wen-hui;WANG Fu-he¹

Department of Physics, Tsinghua University, Beijing 100084 Institute of Physics, Chinese Academy of Sciences, Beijing 100080

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REN Tian-ling, ZHU Jia-lin, XIONG Jia-jiong et al 1997 Chin. Phys. Lett. 14 528-530

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Abstract Cluster model with DV-X_α method is used to study the structural and electronic properties of the p-type doping of ZnSe. It is found that there is Jahn-Teller distortion for P doping and almost no Jahn-Teller distortion for N doping, and that the impurity levels with respect to the maximum of valence band are 118 and 96meV for N and P doping, respectively. The reasons why N can serve as a better dopant than P for p-type ZnSe are discussed.

Keywords: 61.72.Vv 71.55.Gs

Published: 01 July 1997

PACS:	61.72.Vv
	71.55.Gs	(II-VI semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I7/0528

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	ZHU Jia-lin
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	WANG Fu-he

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