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Double-Injection Bifurcation Optical Active Switch Integrated on Silicon-on-Insulator for 1.3 μm Operation |
| ZHAO Ce-zhou1;CHEN Ai-hua2;LIU En-ke3;LI Guo-zheng3 |
| 1Microelectronics Institute,
2Electronic Mechanics Institute, Xidian University, Xian 710071
3Department of Electronic Engineering, Xian Jiaotong University, Xian 710049
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| Cite this article: |
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ZHAO Ce-zhou, CHEN Ai-hua, LIU En-ke et al 1997 Chin. Phys. Lett. 14 183-186 |
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Abstract Based on the double-injection effect, the dual-mode interference principle and the free-carrier plasma dispersion effect, a double-injection bifurcation optical active switch integrated on silicon-on-insulator has been proposed and fabricated. Its insertion loss and crosstalk are measured to be less than 5.32 and -14.4dB, respectively, at wavelength 1.3μm and the total switching current 90mA. Response time is about 180ns.
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| Keywords:
42.79.Ta
42.82.-m
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Published: 01 March 1997
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| PACS: |
42.79.Ta
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(Optical computers, logic elements, interconnects, switches; neural networks)
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42.82.-m
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(Integrated optics)
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