Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

Chin. Phys. Lett.

1997, Vol. 14

Issue (2): 145-147 DOI:

Original Articles

Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

GAO Qiao-jun¹;YOU Li-ping²;PAN Xiao-hui¹;ZHANG Fan¹;PENG Xiao-fu³;LIN Zeng-dong³

¹Department of Physics, ²Laboratory of Electron Microscopy, Peking University, Beijing 100871 ³Beijing Institute of Powder Metallurgy, Beijing 100078

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GAO Qiao-jun, YOU Li-ping, PAN Xiao-hui et al 1997 Chin. Phys. Lett. 14 145-147

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Abstract Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament. The orientation relationship of epitaxial diamond films on silicon substrate has been investigated by cross-sectional high-resolution transmission electron microscopy We found one excellent epitaxial configuration and according to the experimental result we suggest a corresponding model. The lattice misfit is only 0.1-2.8% related to our model and the analysis of 60°type interface dislocation also supports this model.

Keywords: 81.15.Gh 68.55.Eg 68.35.-p

Published: 01 February 1997

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.55.Eg
	68.35.-p	(Solid surfaces and solid-solid interfaces: structure and energetics)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I2/0145

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	GAO Qiao-jun
	YOU Li-ping
	PAN Xiao-hui
	ZHANG Fan
	PENG Xiao-fu
	LIN Zeng-dong

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