Chin. Phys. Lett.  1997, Vol. 14 Issue (2): 141-144    DOI:
Original Articles |
Enhancement of Electroluminescence by Low-Temperature Deposition of Organic Thin Solid Films
GU Jian-hua1;XU Min-hua1;XIAO Zhong-dang1;LU Zu-hong1;HUANG Song-yu2
1National Laboratory of Molecular and Bioelectronics, Southeast University, Nanjing 210096 2Department of Physics, East China University of Science and Technologx Shanghai 200237
Cite this article:   
GU Jian-hua, XU Min-hua, XIAO Zhong-dang et al  1997 Chin. Phys. Lett. 14 141-144
Download: PDF(206KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The electrical and light-emitting behaviors of electroluminescent cells, which consist of naphthoylimide (NPL) as emitting layer and poly(3-octylthiophene)(P3OT) doped with poly(N-vinylcarbazoe) (PVK) as hole transport layer sandwiched between indium-tin-oxide(ITO) and aluminum electrode, have been studied. The mixed polymer (P3OT:PVK) layer and the emitting layer were deposited by spin coating and by vacuum deposition respectively. It was found that the visible blue emission could be observed from the cells at low bias voltage. And when the ITO substrate was cooled to near the liquid N2 temperature during the deposition of NPL emitting layer, the brightness of the cell increased. It was confirmed that holes could be easily injected into NPL layer with deposition temperature decreased.
Keywords: 78.60.Fi      78.55.-m      81.15.Ef     
Published: 01 February 1997
PACS:  78.60.Fi (Electroluminescence)  
  78.55.-m (Photoluminescence, properties and materials)  
  81.15.Ef  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1997/V14/I2/0141
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
GU Jian-hua
XU Min-hua
XIAO Zhong-dang
LU Zu-hong
HUANG Song-yu
Related articles from Frontiers Journals
[1] SUN Dun-Lu**,LUO Jian-Qiao,XIAO Jing-Zhong,ZHANG Qing-Li,CHEN Jia-Kang,LIU Wen-Peng,KANG Hong-Xiang,YIN Shao-Tang. Luminescence and Thermal Properties of Er:GSGG and Yb,Er:GSGG Laser Crystals[J]. Chin. Phys. Lett., 2012, 29(5): 141-144
[2] XU Xiao-Yan, MA Xiang-Yang, JIN Lu, YANG De-Ren. Effect of Rapid Thermal Annealing Ambient on Photoluminescence of ZnO Films[J]. Chin. Phys. Lett., 2012, 29(3): 141-144
[3] WU Li-Ang, FU Heng-Yi, QIAN Jiang-Yun, ZHAO Da-Liang, LUO Qun, QIAO Xu-Sheng**, FAN Xian-Ping, ZHANG Xiang-Hua. The Preparation and Photoluminescence Properties of Fluorosilicate Glass Ceramics Containing CeF3:Dy3+ Nanocrystals[J]. Chin. Phys. Lett., 2012, 29(1): 141-144
[4] YANG Lin-Hong, DONG Hong-Xing, SUN Zheng, SUN Liao-Xin, SHEN Xue-Chu, CHEN Zhang-Hai** . Temperature-Induced Phase Transition of In2O3 from a Rhombohedral Structure to a Body-Centered Cubic Structure[J]. Chin. Phys. Lett., 2011, 28(8): 141-144
[5] YIN Yang, RAN Guang-Zhao**, ZHANG Bin, QIN Guo-Gang** . Photo- and Electro-Luminescence at 1.54µm from Er3+ in SiC:Er2O3 Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 141-144
[6] XU Cheng, **, XU Lin-Min, ZHANG Han-Zhuo, QIANG Ying-Huai, ZHU Ya-Bo, LIU Jiong-Tian, SHAO Jian-Da . Comparative Studies on the Laser Damage Resistance of Ta2O5 and Nb2O5 Films Performed under Different Electron Beam Currents[J]. Chin. Phys. Lett., 2011, 28(6): 141-144
[7] LIAN Jia-Rong**, NIU Fang-Fang, LIU Ya-Wei, ZENG Peng-Ju . Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs[J]. Chin. Phys. Lett., 2011, 28(4): 141-144
[8] ZHANG Jia-Chi**, QIN Qing-Song, YU Ming-Hui, SUN Jia-Yao, SHI Liu-Rong, MA Xin-Long . Up-Conversion Photostimulated Luminescence of Mg2SnO4 for Optical Storage[J]. Chin. Phys. Lett., 2011, 28(2): 141-144
[9] LI Xu, GUAN Li**, AN Jia-Yi, JIN Li-Tao, YANG Zhi-Ping, YANG Yan-Min, LI Pan-Lai, FU Guang-Sheng . Synthesis of Red Phosphor CaZrO3:Eu3+ for White Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(2): 141-144
[10] WANG Xiao, JIANG Zui-Min, XU Fei, **, MA Zhong-Quan, XU Run, YU Bin, LI Ming-Zhu, ZHENG Ling-Ling, FAN Yong-Liang, HUANG Jian, LU Fang . Enhancement of Er3+ Emission from an Er−Si Codoped Al2O3 Film by Stacking Si−Doped Al2O3 Sublayers[J]. Chin. Phys. Lett., 2011, 28(12): 141-144
[11] CHEN Jun, FAN Guang-Han**, PANG-Wei, ZHENG Shu-Wen . Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer[J]. Chin. Phys. Lett., 2011, 28(12): 141-144
[12] FENG Lie-Feng**, LI Yang, LI Ding, WANG Cun-Da, ZHANG Guo-Yi, YAO Dong-Sheng, LIU Wei-Fang, XING Peng-Fei . Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(10): 141-144
[13] LI Pan-Lai**, WANG Zhi-Jun, YANG Zhi-Ping, GUO Qing-Lin . Luminescence and Site Occupancy of Eu2+ in Ba2 Ca(BO3)2[J]. Chin. Phys. Lett., 2011, 28(1): 141-144
[14] ZHONG Ze, SUN Li-Jie, CHEN Xiao-Qing, WU Xiao-Peng, FU Zhu-Xi. Effect of Zn Interstitials on Enhancing Ultraviolet Emission of ZnO Films Deposited by MOCVD[J]. Chin. Phys. Lett., 2010, 27(9): 141-144
[15] LIANG Chun-Jun, ZOU Hui, HE Zhi-Qun, ZHANG Chun-Xiu, LI Dan, WANG Yong-Sheng. Polymer Light-Emitting Diode Using Conductive Polymer as the Anode Layer[J]. Chin. Phys. Lett., 2010, 27(9): 141-144
Viewed
Full text


Abstract