Interface Electronic Structure of Ge/ZnSe( 111)

Chin. Phys. Lett.

1997, Vol. 14

Issue (2): 128-130 DOI:

Original Articles

Interface Electronic Structure of Ge/ZnSe( 111)

ZHANG Hai-feng^1,2;WANG Chong-yu¹;FANG Rong-chuan²;BAN Da-yan²;LI Yong-ping²

¹Central Iron and Steel Research Institute, Beijing 100081 ²Department of Physics, University of Science and Technology of China, Hefei 230026

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ZHANG Hai-feng, WANG Chong-yu, FANG Rong-chuan et al 1997 Chin. Phys. Lett. 14 128-130

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Abstract Using linear muffin-tin orbitals method with atomic sphere approximation, the interface electronic structure of Ge/ZnSe(111) has been studied. The density of states, local density of states as well as local partial density of states are presented. The interface electronic structure and the interaction characteristics between interface atoms are analyzed. The results show a significant effect of the interface atomic arrangement on the electronic structures.

Keywords: 73.40.Lq 71.25.Tn

Published: 01 February 1997

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	71.25.Tn

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I2/0128

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	ZHANG Hai-feng
	WANG Chong-yu
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	BAN Da-yan
	LI Yong-ping

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