| Original Articles |
|
|
|
|
Junction Current Drift Effect of the Cu/Porous Si Device Prepared by Electrodeposition |
| WANG Guan-zhong;LI Peng;MA Yu-rong;FANG Rong-chuan |
| Department of Physics, University of Science and Technology of China, Hefei 230026 |
|
| Cite this article: |
|
WANG Guan-zhong, LI Peng, MA Yu-rong et al 1997 Chin. Phys. Lett. 14 124-126 |
|
|
|
|
Abstract A novel characteristic of the junction current drift effect in the Cu/porous silicon (Cu/PS) device prepared by electrodeposition in which Cu ions were deposited on porous silicon is reported. The junction current increases with time and gradually approaches to a saturated value when a certain forward bias is applied on the Cu/PS device. Moreover, after the bias was withdrawn for a period, a different drift process was observed when the same bias was applied again. The drifttime constant and the initial current of latter drift process depend on cut-off time. Such an effect is explained in terms of the model that only part of electrons from porous silicon contributes to the junction current while other electrons are captured by the traps in the interface between Cu and porous silicon in the Cu/PS device.
|
| Keywords:
73.25.+y
81.15.Lm
81.60.Cp
|
|
|
Published: 01 February 1997
|
|
| PACS: |
73.25.+y
|
|
| |
81.15.Lm
|
(Liquid phase epitaxy; deposition from liquid phases (melts, solutions, And surface layers on liquids))
|
| |
81.60.Cp
|
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
