Crystallization and Fractal Formation in Annealed Al/a-Ge Bilayer Films

Chin. Phys. Lett.

1997, Vol. 14

Issue (10): 756-759 DOI:

Original Articles

Crystallization and Fractal Formation in Annealed Al/a-Ge Bilayer Films

WU Feng;ZHANG Shu-yuan;CHEN Zhi-wen;TAN Shun

Structure Research Laboratory, University of Science and Technology of China, Hefei 230026

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WU Feng, ZHANG Shu-yuan, CHEN Zhi-wen et al 1997 Chin. Phys. Lett. 14 756-759

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Abstract The crystallization and fractal formation in annealed Al/a-Ge bilayer films were studied. It was found that the effect of metal-mediated Crystallization increases with increasing annealing temperature and time. However, fractal patterns could be formed only in samples with proper thickness ratio. Some special phenomena at strain, broken, and step areas are also reported.

Keywords: 61.50.-f 61.16.Bg 61.72.Cc

Published: 01 October 1997

PACS:	61.50.-f	(Structure of bulk crystals)
	61.16.Bg
	61.72.Cc	(Kinetics of defect formation and annealing)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I10/0756

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