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Growth and Luminescence of SiGe Self-organized Dots |
| CHEN Hong;XIE Xiao-gang;CHENG Wen-qin;HUANG Qi;ZHOU Jun-ming |
| Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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CHEN Hong, XIE Xiao-gang, CHENG Wen-qin et al 1996 Chin. Phys. Lett. 13 613-616 |
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Abstract It is found that the SiGe alloy self-organizes into uniform quantum dots embedded in the silicon layer during the growth of strained SiGe/Si rnultilayers on a Si (001) substrate by molecular beam epitaxy. The energy of photoluminescence from the quantum dots is higher than the indirect band-gap of Si, and the luminescence of the quantum dots exceeds that of quantum well by three orders of magnitude. This can be attributed to an indirect-to-direct band-gap conversion in the SiGe dots.
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| Keywords:
68.55.-a
81.15.-z
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Published: 01 August 1996
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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