Electrical Properties of Semi-insulating GaAs Grown from the Melt Under Microgravity Conditions

Chin. Phys. Lett.

1996, Vol. 13

Issue (7): 553-556 DOI:

Original Articles

Electrical Properties of Semi-insulating GaAs Grown from the Melt Under Microgravity Conditions

WANG Zhan-guo;LIN Lan-ying;LI Cheng-ji;ZHONG Xing-ru, LI Yun-yan;WAN Shou-ke;SUN Hong

Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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WANG Zhan-guo, LIN Lan-ying, LI Cheng-ji et al 1996 Chin. Phys. Lett. 13 553-556

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Abstract A technologically important undoped semi-insulating (SI) GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously. The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity.

Keywords: 81.10.Mx

Published: 01 July 1996

PACS:

81.10.Mx

(Growth in microgravity environments)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I7/0553

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	WANG Zhan-guo
	LIN Lan-ying
	LI Cheng-ji
	ZHONG Xing-ru
	LI Yun-yan
	WAN Shou-ke
	SUN Hong

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