| Original Articles |
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Effect of Pressure on the Nucleation of Diamond with Addition
of Oxygen in the Microwave Plasma Chemical Vapor Deposition System
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| WANG Jian-jun;LÜ Fan-xiu |
| Department of Materials Science and Engineering, Beijing University of Science and Technology, Beijing 100083
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| Cite this article: |
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WANG Jian-jun, LÜ, Fan-xiu 1996 Chin. Phys. Lett. 13 473-476 |
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Abstract Effect of oxygen addition on diamond film deposition at higher pressure was studied. It was found that addition of oxygen suppressed diamond nucleation, and the effect of suppression increased with increasing pressure, and at certain pressure level diamond deposition was completely prohibited. Etching effect due to oxygen addition dominated at the very early stage (nucleation stage), therefore it is still possible to take the advantage of oxygen addition on quality improvement of diamond films by introducing oxygen after the nucleation stage.
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| Keywords:
81.15.-z
81.60.-j
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Published: 01 June 1996
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| PACS: |
81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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81.60.-j
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