Quantum Confinement in GaAs Microcrystallites Embedded in SiO<suB>2</suB> Thin Film

Chin. Phys. Lett.

1996, Vol. 13

Issue (10): 797-800 DOI:

Original Articles

Quantum Confinement in GaAs Microcrystallites Embedded in SiO₂ Thin Film

SHI Wang-zhou;LIN Kui-xun;LIN Xuan-ying;QI Zhen-zhong¹

Institute of Material Science, Shantou University, Shantou 515063 ¹Centre of Information Storage, Shanghai Jiaotong University, Shanghai 200030

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SHI Wang-zhou, LIN Kui-xun, LIN Xuan-ying et al 1996 Chin. Phys. Lett. 13 797-800

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Abstract Semiconductor GaAs microcrystallites were embedded in SiO₂ thin films by magnetron rf cosputtering technique. Structures of the thin films were characterized by transmission electron microscopy, x-ray diffraction and x-ray photoelectron microscopy. Average size of microcrystallites, depending on the substrate temperature during deposition, is 3-10nm. Absorption spectra of the films were measured. Blue shift of absorption edge was observed and discussed according to quantum confinement effect.

Keywords: 81.15.Cd 61.40.Tv 73.90.+f

Published: 01 October 1996

PACS:	81.15.Cd	(Deposition by sputtering)
	61.40.Tv
	73.90.+f	(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I10/0797

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	SHI Wang-zhou
	LIN Kui-xun
	LIN Xuan-ying
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