Study of Diamond Nucleation on Porous Silicon

Chin. Phys. Lett.

1995, Vol. 12

Issue (7): 435-437 DOI:

Original Articles

Study of Diamond Nucleation on Porous Silicon

BAI Yizhen;WANG Chunlei;JIN Zengsun;LÜ Xianyi;ZOU Guangtian

State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023

Cite this article:

BAI Yizhen, WANG Chunlei, JIN Zengsun et al 1995 Chin. Phys. Lett. 12 435-437

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Abstract Diamond films have been deposited on porous silicon with microwave plasma chemical vapour deposition method. Nucleation density and site have been observed and analyzed by using scanning electron micrography. Experimental results showed that the nucleation density changes with the porosity and the nucleation occurs mostly on the edge of the pores. Reasons of these phenomena are discussed.

Keywords: 81.15.Gh 61.50.Cj

Published: 01 July 1995

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	61.50.Cj

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1995/V12/I7/0435

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