| Original Articles |
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Two-Wave Mixing in Resonant Photorefractive GaAs/AlGaAs
Semi-insulating Multiple Quantum Wells
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| HU Chengyong*;ZHANG Zhiguo;KANG Jing;FENG Wei;HU Qiang;HUANG Qi;ZHOU Junming
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| Institute of Physics, Academia Sinica, Being 100080
*National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Academia
Sinica, Being 100083 (present address).
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| Cite this article: |
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HU Chengyong, ZHANG Zhiguo, KANG Jing et al 1995 Chin. Phys. Lett. 12 358-361 |
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Abstract We have observed the two-wave mixing of the photorefractive GaAs/AIGaAs semiinsulating multiple quantum wells fabricated by film lift-off approach and proton implanting technique. Under the non-optimized condition, we have obtained the two-wave mixing gain larger than 180cm-1 at wavelength near 784nm for a field of 10kV/cm. Energy transfer is also observed when the applied field is perpendicular to the grating vector.
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| Keywords:
42.65. Hw
78.65. Fa
73.60. Br
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Published: 01 June 1995
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