| Original Articles |
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Low Threshold and High Efficiency Nd:S-VAP Laser |
| ZHAO Shengzhi;WANG Qingpu;ZHANG Xingyu;WANG Xiaojie;WANG Xiangtai1;SUN Lianke2;ZHANG Shaojun2 |
| Department of Optics, Shandong University, Ji nan 250100
1Department of Physics, Shandong Normal University, Ji nan 250002
2Institute of Crystal Materials, Shandong University, Ji nan 250100 |
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| Cite this article: |
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ZHAO Shengzhi, WANG Qingpu, ZHANG Xingyu et al 1995 Chin. Phys. Lett. 12 355-357 |
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Abstract The absorption spectrum of a new sort of crystal Nd:S-VAP was measured, which showed that Nd:S-VAP can be appropriately pumped at 583.0 and 809.0nm. By using tunable dye-laser (570.0-600.0nm) as pumping light, the performance of low threshold and high efficiency Nd:S-VAP laser has been realized. The characteristics of the output laser, such as 1.5nm linewidth, 5 ns pulse width, almost total polarity, up to 50% conversion efficiency, down to 2mJ threshold energy and so on, were presented. Meanwhile, the prospect of Nd:S-VAP crystal for low threshold, high efficiency miniature laser was discussed.
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| Keywords:
42.55.Rz
42.60.Lh
32.80.Bx
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Published: 01 June 1995
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42.55.Rz
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(Doped-insulator lasers and other solid state lasers)
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42.60.Lh
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(Efficiency, stability, gain, and other operational parameters)
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32.80.Bx
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