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Self-Trapping Process of Exciton in C60 |
| ZHANG Guoping1,2;MAO Yongsheng1;ZONG Xiangfu2;SUN Xin1;LU Jicun2;Kee Hag Lee3;Tae Young Park3;FU Rouli4;CHU Junhao4 |
| 1T. D. Lee Laboratory and Department of Physics, Fudan University, Shanghai 200433
2Department of Materials Science, Fudan University, Shanghai 200433
3Departments of Chemistry and Physics Education, Won Kwang University, Iri 570-749, Korea
4National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai 200083
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| Cite this article: |
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ZHANG Guoping, MAO Yongsheng, ZONG Xiangfu et al 1995 Chin. Phys. Lett. 12 665-668 |
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Abstract A dynamical scheme is employed to simulate the self-trapping of the exciton in C60. During the self-trapping process, due to the bond distortion, two gap states A1u and A2u are separated from the highest occupied molecular orbital and the lowest unoccupied molecular orbital respectively. From the evolutions of the bond distortion and these two levels the relaxation time of the self-trapping exciton is about 90 fs. It is noticed that the relaxation of the exciton is much quicker than that of the charge transfer in C60.
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| Keywords:
31.30.-i
71.10.+x
75.10.Lp
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Published: 01 November 1995
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