Cubic Boron Nitride Films Formed by Thermally Assisted rf Plasma CVD

Chin. Phys. Lett.

1995, Vol. 12

Issue (1): 58-60 DOI:

Original Articles

Cubic Boron Nitride Films Formed by Thermally Assisted rf Plasma CVD

LIAO Kejun;WANG Wanlu

Department of Physics, Lanzhou University, Lanzhou 730000

Cite this article:

LIAO Kejun, WANG Wanlu 1995 Chin. Phys. Lett. 12 58-60

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Abstract Cubic boron nitride films have been synthesized using thermally assisted rf plasma chemical vapour deposition (CVD) with a tungsten filament in the reactive gasses of B₂H₆ and NH₃. The films obtained are of good quality and are characterized by transmission electron microscope, infrared absorption measurement and electron energy loss spectrometry. Experimental results showed that the structure and quality of cubic boron nitride films closely depend on the growth conditions of the films.

Keywords: 81.15.Gh 68.55.Gi

Published: 01 January 1995

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.55.Gi

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1995/V12/I1/058

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