A New Method for Studying the Distribution of Induced Defects in Potential Wells in a-Si : H/a-SiN<suB>x</suB> : H Multilayer

Chin. Phys. Lett.

1994, Vol. 11

Issue (9): 573-576 DOI:

Original Articles

A New Method for Studying the Distribution of Induced Defects in Potential Wells in a-Si : H/a-SiN_x : H Multilayer

WANG Zhichao;GUO Shengkang;CAO Guorong;CHEN Cai;SUN Meixiang

Department of Physics, Nanjing University, Nanjing 210008

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WANG Zhichao, GUO Shengkang, CAO Guorong et al 1994 Chin. Phys. Lett. 11 573-576

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Abstract The induced defects and their distribution in a-Si: H/a-SiN_x : H multilayers can be determined by use of electromagnetic technique. It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are asymmetric and related to the growth direction of the film; a large number of induced defects exist in the interface region away from substrate, but few or no in the interface region near substrate.

Keywords: 64.70.-p 68.35.Dr 68.65.+g

Published: 01 September 1994

PACS:	64.70.-p	(Specific phase transitions)
	68.35.Dr
	68.65.+g

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I9/0573

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	WANG Zhichao
	GUO Shengkang
	CAO Guorong
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	SUN Meixiang

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