Photoelectrochemical Behavior of the GaAs/A1<suB>x</suB>Ga<suB>l-x</suB>As Superlattice Elect rode/Electrolyte Interface

Chin. Phys. Lett.

1994, Vol. 11

Issue (4): 239-241 DOI:

Original Articles

Photoelectrochemical Behavior of the GaAs/A1_xGa_l-xAs Superlattice Elect rode/Electrolyte Interface

LIU Yao;XIAO Xurui;LI Xueping;REN Xinmin;ZHENG Haiqun^*;ZENG Yiping^*;YAN Chunhui^*;SUN Dianzhao^*

The Center of Photoelectrochemistry, Institute of Photographic Chemistry, Academia Sinica, Beijing 100101 ^*Institute of Semiconductors, Academia Sinica, Beijing 100083

Cite this article:

LIU Yao, XIAO Xurui, LI Xueping et al 1994 Chin. Phys. Lett. 11 239-241

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Abstract Single and multiple quantum wells of lattice-matched superlattices material GaAs/A1_xGa_l-xAs have been studied as photoelectrodes in photoelectrochemical cells containing nonaqueous electrolyte. Structured photocurrent spectra in the potential range of -1.8 to 1.0 V (vs standard calomel electrode) were obtained. The quantum yields for both superlattice electrodes were estimated and compared.

Keywords: 73.40.Mr

Published: 01 April 1994

PACS:

73.40.Mr

(Semiconductor-electrolyte contacts)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I4/0239

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	LIU Yao
	XIAO Xurui
	LI Xueping
	REN Xinmin
	ZHENG Haiqun
	ZENG Yiping
	YAN Chunhui
	SUN Dianzhao

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