| Original Articles |
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Slow Positron Annihilation in Silicide Films Formed by Solid State Interaction of Co/Ti/Si and Co/Si
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| LIU Ping;LIN Chenglu;ZHOU Zuyao;ZOU Shichang;WENG Huiming1;HAN Rongdian1;LI Bingzong2 |
| Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
1Department of Modern Physics, University of Science and Technology of China, Hefei 230026
2Department of Electronic Engineering, Fudan University, Shanghai 200433 |
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| Cite this article: |
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LIU Ping, LIN Chenglu, ZHOU Zuyao et al 1994 Chin. Phys. Lett. 11 231-234 |
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Abstract Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0-20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies is characterized by a line-shape parameter, S. It was found that the measured S parameters are sensitive to thin film reaction and crystalline characteristics. In particular, the S parameter of epitavial CoSi2 formed by the ternary reaction is quite different from that of the polycrystalline CoSi2 formed by direct reaction of Co with Si.
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| Keywords:
68.55.-a
68.55.Eg
68.35.-p
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Published: 01 April 1994
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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68.55.Eg
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68.35.-p
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(Solid surfaces and solid-solid interfaces: structure and energetics)
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