Damage Production and Annealing During MeV He Ion RBS/Channeling Analysis of GaP

Chin. Phys. Lett.

1994, Vol. 11

Issue (4): 219-222 DOI:

Original Articles

Damage Production and Annealing During MeV He Ion RBS/Channeling Analysis of GaP

LI Xiangyang;CHENG Huansheng;YANG Fujia

T. D. Lee Physics Laboratory, Fudan University, Shanghai 200433, and Mailing address :Department of Nuclear Science, Fudan University, Shanghai 200433

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LI Xiangyang, CHENG Huansheng, YANG Fujia 1994 Chin. Phys. Lett. 11 219-222

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Abstract The creation of defects in GaP bombarded with MeV ⁴He ions has been studied under ultra-high-vacuum condition by Rutherford backscattering/channeling (RBS/C) method. Our experimental results suggest that the defect generation rate is strongly related to the surface condition. When the GaP is covered with a thin amorphous layer, a significant ion beam annealing effect Will be observed. The present results show that for GaP the damage is produced mainly by nuclear collision.

Keywords: 61.80.Jh 61.70.At

Published: 01 April 1994

PACS:	61.80.Jh	(Ion radiation effects)
	61.70.At

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I4/0219

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	LI Xiangyang
	CHENG Huansheng
	YANG Fujia

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