Diamond Nuclei on the Silicon Mirror Surface by Direct-Current
Glow Discharge Chemical Vapor Deposition

Chin. Phys. Lett.

1994, Vol. 11

Issue (3): 185-188 DOI:

Original Articles

Diamond Nuclei on the Silicon Mirror Surface by Direct-Current Glow Discharge Chemical Vapor Deposition

GAO Chunxiao;ZOU Guangtian;JIN Zengsun

State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023

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GAO Chunxiao, ZOU Guangtian, JIN Zengsun 1994 Chin. Phys. Lett. 11 185-188

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Abstract A new method is proposed for generation of high density diamond nuclei in the dc glow discharge chemical vapor deposition. Application of dc negative valtage together with high methane content has been found to generate diamond nuclei as high as 10¹⁰/cm² on mirror-polished Si wafer. It has been indicated that carbon over-saturation, negative voltage and hydrogen play an important role in this new pretreatment process.

Keywords: 81.15.Gh 61.50.Cj

Published: 01 March 1994

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	61.50.Cj

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I3/0185

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