Synthesis of Diamond Films on Stainless Steel Substrates

Chin. Phys. Lett.

1994, Vol. 11

Issue (3): 181-184 DOI:

Original Articles

Synthesis of Diamond Films on Stainless Steel Substrates

ZHAN Rujuan;CHEN Jifong;ZHU Xiaodong;JIANG Xicheng, WANG Xueyi;WU Hao

Department of Modern Physics, Structure Research Laboratory, University of Science and Technology of China, Hefei 230026

Cite this article:

ZHAN Rujuan, CHEN Jifong, ZHU Xiaodong et al 1994 Chin. Phys. Lett. 11 181-184

Download: PDF(201KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract The continuous diamond films have been deposited on the stainless steel substrate using the hot cathode dc discharge plasma chemical vapor deposition method. The characteristics of diamond film are reported and the pretreatment of stainless steel substrate before deposition is also described.

Keywords: 81.15.Gh 52.75.–d

Published: 01 March 1994

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	52.75.–d

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I3/0181

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	ZHAN Rujuan
	CHEN Jifong
	ZHU Xiaodong
	JIANG Xicheng
	WANG Xueyi
	WU Hao

Related articles from Frontiers Journals

[1]	SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 181-184
[2]	BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al₂O₃ Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 181-184
[3]	SANG Ling, WANG Jun, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 181-184
[4]	LI Zhe-Yang, , HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices**[J]. Chin. Phys. Lett., 2011, 28(9): 181-184
[5]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 181-184
[6]	CHENG Zai-Jun, SAN Hai-Sheng, CHEN Xu-Yuan, , LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 181-184
[7]	CHEN Yao, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(4): 181-184
[8]	WEI Meng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(4): 181-184
[9]	HOU Qi-Feng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, YIN Hai-Bo, LI Jin-Min, WANG Zhan-Guo . Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN**[J]. Chin. Phys. Lett., 2011, 28(3): 181-184
[10]	YU Chen-Hui, LIU Cheng, HAN Xiang-Yun, KANG Wei, FANG Yan-Yan, DAI Jiang-Nan, WU Zhi-Hao, CHEN Chang-Qing . Properties of Si Doped Al_0.4Ga_0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD**[J]. Chin. Phys. Lett., 2011, 28(2): 181-184
[11]	ZHOU Zhi-Feng, QIN Fu-Wen, , ZANG Hai-Rong, ZHANG Dong, CHEN Wei-Ji, ZHI An-Bo, LIU Xing-Long, YU Bo, JIANG Xin, . Influence of N₂ Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD**[J]. Chin. Phys. Lett., 2011, 28(2): 181-184
[12]	LV Wen-Bin, WANG Lai, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi . Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers**[J]. Chin. Phys. Lett., 2011, 28(12): 181-184
[13]	LI Li-Gong, LIU Shu-Man, LUO Shuai, YANG Tao, WANG Li-Jun, LIU Feng-Qi, YE Xiao-Ling, XU Bo, WANG Zhan-Guo . Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(11): 181-184
[14]	ZHU Guang-Yao, GU Shu-Lin, ZHU Shun-Ming, TANG Kun, YE Jian-Dong, ZHANG Rong, SHI Yi, ZHENG You-Dou . Simulation and Suppression of the Gas Phase Pre-reaction in Metal-Organic Chemical Vapor Deposition of ZnO**[J]. Chin. Phys. Lett., 2011, 28(11): 181-184
[15]	XIA Xiao-Chuan, WANG Hui, ZHAO Yang, WANG Jin, ZHAO Jian-Ze, SHI Zhi-Feng, LI Xiang-Ping, LIANG Hong-Wei, ZHANG Bao-Lin, DU Guo-Tong, . Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method**[J]. Chin. Phys. Lett., 2011, 28(10): 181-184

Viewed

Full text

Abstract