High Hole Mobility Si/Si<suB>l-x</suB>Ge<suB>x</suB>/Si Heterostructure

Chin. Phys. Lett.

1994, Vol. 11

Issue (2): 116-118 DOI:

Original Articles

High Hole Mobility Si/Si_l-xGe_x/Si Heterostructure

JIANG Ruolian;LIU Jianlin;ZHENG Youdou^*;ZHENG Guozhen^*;WEI Yayi^*;SHEN Xuechu^*

Department of Physics, Nanjing University, Nanjing 210008 ^*National Laboratory for Infrared Physics, Shanghai 200083

Cite this article:

JIANG Ruolian, LIU Jianlin, ZHENG Youdou et al 1994 Chin. Phys. Lett. 11 116-118

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Abstract High mobility Si/Si_l-xGe_x/Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD (rapid radiant heating/very low pressure-CVD). Hole Hall mobilities as high as about 300cm²/V.s(293 K) and 7500cm²/V.s(77K) have been obtained for heterostructures with x = 0.3. The variation of hole mobility with temperature and the influence of Ge fraction on hole mobility were investigated.

Keywords: 73.40.Lq 72.80.Cw 68.55.-a

Published: 01 February 1994

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	72.80.Cw	(Elemental semiconductors)
	68.55.-a	(Thin film structure and morphology)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I2/0116

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	JIANG Ruolian
	LIU Jianlin
	ZHENG Youdou
	ZHENG Guozhen
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	SHEN Xuechu

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