Electronic Structure of Type-II InAs/GaSb Misaligned Superlattice

Chin. Phys. Lett.

1994, Vol. 11

Issue (2): 109-112 DOI:

Original Articles

Electronic Structure of Type-II InAs/GaSb Misaligned Superlattice

LONG Fei;LIU Shenzhi^*;MEI Fei;MIAO Jingqi;LIANG Jingguo

Department of Physics, and ^*Computer Center, Jiangxi Normal University, Nanchang 330027 Department of Physics, Peking University, Beijing 100871

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LONG Fei, LIU Shenzhi, MEI Fei et al 1994 Chin. Phys. Lett. 11 109-112

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Abstract The Energy band edges of type-II InAs/GaSb (001) misaligned superlattices as functions of InAs and GaSb layer thicknesses are calculated by a pseudopotential method with quick convergency. The results show the trend of deep-shallow transitions of impurities in the superlattices. The regime in which the superlattice changes from semiconductor to semimetal is also showed.

Keywords: 71.55.Eq 71.70.-d 73.20.Dx

Published: 01 February 1994

PACS:	71.55.Eq	(III-V semiconductors)
	71.70.-d	(Level splitting and interactions)
	73.20.Dx

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I2/0109

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