Si<suB>l-x</suB>Ge<suB>x</suB>/Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy

Chin. Phys. Lett.

1994, Vol. 11

Issue (12): 734-736 DOI:

Original Articles

Si_l-xGe_x/Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy

GAO Yong;LIU Enke;LI Guozheng;LIU Xiding;ZHANG Xiangjiu^*;LU Xuekun^*;WANG Xun^*

Electronic Engineering Department, Xi’an Jiaotong University, Xi’an 710049 ^*Surface Physics National Key Laboratory, Fudan University, Shanghai 200433

Cite this article:

GAO Yong, LIU Enke, LI Guozheng et al 1994 Chin. Phys. Lett. 11 734-736

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Abstract Si_l-xGe_x/Si single-mode rib waveguides with 0.5dB/cm losses have been fabricated, in which the SiGe layers are grown by molecular beam epitaxy. The single-mode waveguide dimensions determined experimentally are consistent with the single-mode theory of SiGe waveguides.

Keywords: 42.79.-e 42.82.+n

Published: 01 December 1994

PACS:	42.79.-e	(Optical elements, devices, and systems)
	42.82.+n

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I12/0734

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	GAO Yong
	LIU Enke
	LI Guozheng
	LIU Xiding
	ZHANG Xiangjiu
	LU Xuekun
	WANG Xun

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