Acoustoelectric Nonlinear Effect of Vertically Incident Bulk Wave at LiNbO<suB>3</suB>/Si Boundary

Chin. Phys. Lett.

1993, Vol. 10

Issue (6): 369-370 DOI:

Original Articles

Acoustoelectric Nonlinear Effect of Vertically Incident Bulk Wave at LiNbO₃/Si Boundary

LI Wei;YIN Jianhua;SHUI Yongan

Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210008

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LI Wei, YIN Jianhua, SHUI Yongan 1993 Chin. Phys. Lett. 10 369-370

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Abstract The acoustoelectric nonlinear effect due to the electrical nonlinearity of semi-conductor has been observed as presented in this article by using vertically incident bulk wave at LiNbO₃/Si boundary. This effect is closely related to the bias voltage applied to the semiconductor Si. The results we have obtained provide a feasible new structure for the further study of acoustoelectric nonlinear coupling between piezoelectrics and semiconductors.

Keywords: 62.30.+d 46.60.Df

Published: 01 June 1993

PACS:	62.30.+d	(Mechanical and elastic waves; vibrations)
	46.60.Df

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1993/V10/I6/0369

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