Chin. Phys. Lett.  1993, Vol. 10 Issue (12): 752-755    DOI:
Original Articles |
Photoabsorption Spectra of Nano-Crystalline Silicon Films
LIU Xiangna;HE Yuliang;F. Wang*;R. Schwarz*
Department of Physics, and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 201800 *Department of Physics El6, T. U. Munich, F. R. Germany
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LIU Xiangna, HE Yuliang, F. Wang et al  1993 Chin. Phys. Lett. 10 752-755
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Abstract The photoabsorption spectra of nano-crystalline silicon (nc-Si :H) films were measured by means of constant photoconductivity method. We investigated the changes of absorption spectra with the increasing of crystallinity as the deposited films are amorphous, microcrystalline and nano-crystalline. We found that in nc-Si : H the transition processes in the interfacial region between the grains predominate the whole range of the absorption spectra. We related the phenomenon to the structural changes in the material.
Keywords: 73.50.Pz      72.80.Ng     
Published: 01 December 1993
PACS:  73.50.Pz (Photoconduction and photovoltaic effects)  
  72.80.Ng (Disordered solids)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1993/V10/I12/0752
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HE Yuliang
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