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Anomalous Dielectric Behavior in Nanometer-Sized Amorphous Silicon Nitride |
| WANG Tao;ZHANG Lide;MOU Jimei* |
| Institute of Solid State Physics, Academia Sinica, Eefei 230031
*Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026
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| Cite this article: |
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WANG Tao, ZHANG Lide, MOU Jimei 1993 Chin. Phys. Lett. 10 676-679 |
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Abstract An anomalous dielectric behavior in nanometer-sized amorphous silicon nitride is reported. The dielectric constant of nanometer-sized amorphous silicon nitride has strong dependence on frequency at room temperature (RT), which is completely different from the conventional coarse-grain silicon nitride. The maximum of the dielectric constant of nanometer-sized amorphous silicon nitride-at RT is about 40 times larger than that of the conventional silicon nitride. The anomalous dielectric behavior is explained by a kind of mechanism of polarization, that is, interfacial polarization.
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| Keywords:
77.30.+d
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Published: 01 November 1993
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