Chin. Phys. Lett.  1993, Vol. 10 Issue (10): 638-640    DOI:
Original Articles |
Optoelectronic Properties Modulated by Means of Change in Lattice Sites of Impurity in LiNbO3 Crystals
FENG Xiqi
Shanghai Institute of Ceramics, Academia Sinica, Shanghai 200050
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FENG Xiqi 1993 Chin. Phys. Lett. 10 638-640
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Abstract This paper discusses the actual possibility of altering artificially certain optoelectronic properties of LiNbO3 crystals by means of change in lattice site of a few Me3+ ions in the crystals. A new lattice site Cr3+ defect in Cr-doped LiNbO3 vapour transport equilibration has been displayed as a practical example.
Keywords: 91.40.Tv      61.70.Ey     
Published: 01 October 1993
PACS:  91.40.Tv  
  61.70.Ey  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1993/V10/I10/0638
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