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Anisotropic Magnetoresistive Sensors and Magnetometers Applying Alternating Bias Magnetic Field
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| ZOU Fengwu;HE Zhiyong;JIA Kechang* |
| Department of Physics, Huazhong University of Science and Technology, Wuhan 430074
*State Key Laboratory of Magnetisin, Institute of Physics, Academia Siiiica, Beijing 100080 |
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| Cite this article: |
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ZOU Fengwu, HE Zhiyong, JIA Kechang 1993 Chin. Phys. Lett. 10 581-584 |
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Abstract Thin permalloy film with uniaxial anisotropy have been prepared by ion-beam sputtering method. Magnetic field sensors of this type film are composed of four magnetoresistors in Wheastone bridge connection. One may obtain sensitivity more than 10mV/Oe with 10-5 Oe resolution by suitable design of sensors parameters. A model based on single domain structure and resistance anisotropy effect explains the behavior of the sensors and a method has been developed to reduce the influence of offset voltage and hysteresis to minimum.
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| Keywords:
07.55.+x
85.70.-w
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Published: 01 October 1993
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