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Thermal Conversion of Semi-insulating GaAs due to Gallium Vacancies and Anti-structure Disorders |
| WENG Yumin;ZHENG Qingping;FAN Zhineng;ZONG Xiangfu |
| Institute of Materials Science, Fudan University, Shanghai 200433 |
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| Cite this article: |
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WENG Yumin, ZHENG Qingping, FAN Zhineng et al 1992 Chin. Phys. Lett. 9 375-378 |
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Abstract Rapid thermal annealing induced acceptor levels and their annealing behavior in semi-insulating GaAs were investigated using the photoluminescence technique. Results suggest that the introduction of excess of VGa and GaAs, related acceptors might lead to thermal conversion of GaAs wafers.
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| Keywords:
71.55.-h
78.55.-r
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Published: 01 July 1992
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