Concentration Profiling of Fluorine in F-doped SnO<suB>2</suB> Film

Chin. Phys. Lett.

1992, Vol. 9

Issue (7): 371-374 DOI:

Original Articles

Concentration Profiling of Fluorine in F-doped SnO₂ Film

XU Bingzhang;XIA Yueyuan;TAN Chunyu;CHEN Youpeng;LI Shuying;ZHENG Zongshuang*;JIANG Weilin*

Department of Physics, Shandong University, Jinan 250100 *Institute of Physics, Academia Sinica, Beijing 100080

Cite this article:

XU Bingzhang, XIA Yueyuan, TAN Chunyu et al 1992 Chin. Phys. Lett. 9 371-374

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Abstract Depth profiles of fluorine in F-doped tin oxide (FTO) films prepared by atmospherical pressure chemical vapour deposition method have been studied by use of ¹⁹F(p,αγ ) ¹⁶O resonance nuclear reactions near 872.1 keV. A proper convolution method was used to get the real depth profiles of fluorine from the measured γ-ray excitation curves. Secondary ion mass spectrometry in conjunction with Rutherford backscattering spectrometry analysis was used to determine the density of the FTO films. It was found that the density of the films is markedly different from an earlier reported value.

Keywords: 61.80.Jh 61.70.Wp

Published: 01 July 1992

PACS:	61.80.Jh	(Ion radiation effects)
	61.70.Wp

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1992/V9/I7/0371

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	XU Bingzhang
	XIA Yueyuan
	TAN Chunyu
	CHEN Youpeng
	LI Shuying
	ZHENG Zongshuang
	JIANG Weilin

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