Transmission Electron Microscopy Investigations of Misfit Dislocation Interactions in GaAs/lnGaAs Superlattices on GaAs (001) Substrates

Chin. Phys. Lett.

1992, Vol. 9

Issue (7): 367-370 DOI:

Original Articles

Transmission Electron Microscopy Investigations of Misfit Dislocation Interactions in GaAs/lnGaAs Superlattices on GaAs (001) Substrates

ZOU Jin¹;JIANG Shusheng^1,2;D. J. H. Cockayne¹;ZHANG Yunwu²;GUO Xiang²;PENG Zhengfu²

¹Electron Microscope Unit, The University of Sydney, NSW 2006, Australia ²On leave from Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008 ³Nanjing Electronic Devices Institute, Nanjing 210008

Cite this article:

ZOU Jin, JIANG Shusheng, D. J. H. Cockayne et al 1992 Chin. Phys. Lett. 9 367-370

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Abstract The complex configurations and interactions of misfit dislocations in strained GaAs/InGaAs superlattices on GaAs (001) substrates have been studied by transmission electron microscopy under the two-beam or weak beam conditions. The observed interactions between a pair of 60°misfit dislocations and an orthogonal 60°misfit dislocation are theoretically explained.

Keywords: 68.65.+g

Published: 01 July 1992

PACS:

68.65.+g

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1992/V9/I7/0367

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	ZOU Jin
	JIANG Shusheng
	D. J. H. Cockayne
	ZHANG Yunwu
	GUO Xiang
	PENG Zhengfu

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