Subband Optical Transitions in a-Si:H Quantum Well Structures

Chin. Phys. Lett.

1991, Vol. 8

Issue (8): 432-435 DOI:

Original Articles

Subband Optical Transitions in a-Si:H Quantum Well Structures

CHEN Kunji;XU Jun;ZHOU Lin;JIANG Jiangong;LI Zhifeng;DU Jiafang

Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008

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CHEN Kunji, XU Jun, ZHOU Lin et al 1991 Chin. Phys. Lett. 8 432-435

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Abstract The hydrogenated amorphous silicon (a-Si:H)/silicon carbide (a-SiC_x:H) quantum well (QW) and superlattice structures were fabricated by glow discharge deposition. Wavelength differential absorption spectroscopy has been applied to study the subband transition in a-Si:H/a-SiC_x:H Q W, and derivative spectra change clearly from a linear to a step-like form when a-Si:H well-layer thickness has decreased below 40Å. These results indicate that three-dimensional parabolic band transition is turned into subband transition in the a-Si:H QW.

Keywords: 78.65.-s 73.40.Lq 68.65.+g

Published: 01 August 1991

PACS:	78.65.-s
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	68.65.+g

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1991/V8/I8/0432

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